Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits
نویسندگان
چکیده
We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer of 60 nm demonstrates sufficient capability for gas byproduct diffusion and absorption, leading to a high surface energy of 2.65 J/m after a 2-h 300 C anneal. O2 plasma treatment and surface chemistry optimization in dilute hydrofluoric (HF) solution and NH4OH vapor efficiently suppress the small-size interfacial void density down to 2 voids/cm, dramatically increasing the wafer-bonded device yield. Bonding-induced strain, as determined by x-ray diffraction measurements, is negligible. The demonstration of a 50 mm InP epitaxial layer transferred to a silicon-on-insulator (SOI) substrate shows the promise of the method for wafer-scale applications.
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